- 制造商 :
- 系列 :
- 包装/箱 :
- 25°C时的电流-连续漏极（Id） :
- Rds开启（最大）@Id，Vgs :
- Vgs（th）（最大）@Id :
- 输入电容（Ciss）（最大）@Vds :
11 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,191
有现货
|
EPC | TRANS GAN 2N-CH 60V BUMPED DIE | eGaN® | Discontinued at Digi-Key | Tray | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
|
|
获得报价 |
3,468
有现货
|
Vishay Siliconix | MOSFET 2P-CH 20V 3.7A 1206-8 | TrenchFET® | Last Time Buy | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 2.8W | 1206-8 ChipFET™ | 2 P-Channel (Dual) | Standard | 20V | 3.7A | 144 mOhm @ 2.5A, 4.5V | 1V @ 250µA | 6.8nC @ 5V | 276pF @ 10V | ||
|
|
|
获得报价 |
3,286
有现货
|
Vishay Siliconix | MOSFET 2P-CH 20V 3.7A 1206-8 | TrenchFET® | Last Time Buy | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 2.8W | 1206-8 ChipFET™ | 2 P-Channel (Dual) | Standard | 20V | 3.7A | 144 mOhm @ 2.5A, 4.5V | 1V @ 250µA | 6.8nC @ 5V | 276pF @ 10V | ||
|
|
|
获得报价 |
3,488
有现货
|
Vishay Siliconix | MOSFET 2P-CH 20V 3.7A 1206-8 | TrenchFET® | Last Time Buy | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 2.8W | 1206-8 ChipFET™ | 2 P-Channel (Dual) | Standard | 20V | 3.7A | 144 mOhm @ 2.5A, 4.5V | 1V @ 250µA | 6.8nC @ 5V | 276pF @ 10V | ||
|
|
|
获得报价 |
733
有现货
|
Vishay Siliconix | MOSFET 2P-CH 20V 3.7A 1206-8 | TrenchFET® | Last Time Buy | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SMD, Flat Lead | 2.8W | 1206-8 ChipFET™ | 2 P-Channel (Dual) | Standard | 20V | 3.7A | 144 mOhm @ 2.5A, 4.5V | 1V @ 250µA | 6.8nC @ 5V | 276pF @ 10V | ||
|
|
|
获得报价 |
2,971
有现货
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
|
|
|
获得报价 |
688
有现货
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
|
|
|
获得报价 |
1,780
有现货
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
|
|
|
获得报价 |
1,051
有现货
|
EPC | MOSFET 2 N-CHANNEL 60V 23A DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
|
|
|
获得报价 |
1,227
有现货
|
EPC | MOSFET 2 N-CHANNEL 60V 23A DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V | ||
|
|
|
获得报价 |
2,192
有现货
|
EPC | MOSFET 2 N-CHANNEL 60V 23A DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 60V | 23A (Tj) | 4.4 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.8nC @ 5V | 830pF @ 30V |
粤ICP备2022113175号-1