- 供应商设备包 :
4 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
2,081
有现货
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | ||
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获得报价 |
1,076
有现货
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | ||
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获得报价 |
1,526
有现货
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | ||
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获得报价 |
3,088
有现货
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V |
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