- 供应商设备包 :
4 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | |
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|
获得报价 |
2,081
有现货
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 500mW | 8-SOIC | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | |||
|
获得报价 |
1,076
有现货
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16SOIC | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Surface Mount | 16-SOIC (0.154", 3.90mm Width) | 500mW | 16-SOIC | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | |||
|
获得报价 |
1,526
有现货
|
Advanced Linear Devices Inc. | MOSFET 4N-CH 10.6V 16DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 16-DIP (0.300", 7.62mm) | 500mW | 16-PDIP | 4 N-Channel, Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V | |||
|
获得报价 |
3,088
有现货
|
Advanced Linear Devices Inc. | MOSFET 2N-CH 10.6V 8DIP | EPAD® | Active | Tube | 0°C ~ 70°C (TJ) | Through Hole | 8-DIP (0.300", 7.62mm) | 500mW | 8-PDIP | 2 N-Channel (Dual) Matched Pair | Depletion Mode | 10.6V | 12mA, 3mA | 540 Ohm @ 0V | 3.45V @ 1µA | - | 2.5pF @ 5V |