- 供应商设备包 :
- FET特性 :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
18 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
3,094
有现货
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8-SOIC | HEXFET® | Obsolete | Digi-Reel® | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 1V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
|
获得报价 |
3,045
有现货
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8-SOIC | HEXFET® | Obsolete | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 1V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
|
获得报价 |
2,144
有现货
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | HEXFET® | Obsolete | Tube | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
|
获得报价 |
2,625
有现货
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Digi-Reel® | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
|
获得报价 |
3,945
有现货
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Cut Tape (CT) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
|
获得报价 |
1,524
有现货
|
Infineon Technologies | MOSFET 2N-CH 55V 5.1A 8SOIC | Automotive, AEC-Q101, HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 3V @ 250µA | 44nC @ 10V | 780pF @ 25V | |||
|
获得报价 |
3,389
有现货
|
Infineon Technologies | MOSFET N-CH 55V 5.1A | HEXFET® | Active | Tape & Reel (TR) | -55°C ~ 175°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.4W | 8-SO | 2 N-Channel (Dual) | Standard | 55V | 5.1A | 50 mOhm @ 5.1A, 10V | 1V @ 250µA (Min) | 44nC @ 10V | 780pF @ 25V | |||
|
获得报价 |
3,507
有现货
|
ON Semiconductor | MOSFET 2N-CH 60V 5.1A 8-SO | Automotive, AEC-Q101, UltraFET™ | Not For New Designs | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.5W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.1A | 49 mOhm @ 5.1A, 10V | 3V @ 250µA | 23nC @ 10V | 620pF @ 25V | |||
|
获得报价 |
1,758
有现货
|
Diodes Incorporated | MOSFET N/P-CH 12V 5.1A UDFN2020 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 1.36W | U-DFN2020-6 (Type B) | N and P-Channel Complementary | Standard | 12V | 5.1A | 34 mOhm @ 4.6A, 4.5V | 1V @ 250µA | 23.1nC @ 10V | 1003pF @ 6V | |||
|
获得报价 |
2,499
有现货
|
Diodes Incorporated | MOSFET N/P-CH 12V 5.1A UDFN2020 | Automotive, AEC-Q101 | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 1.36W | U-DFN2020-6 (Type B) | N and P-Channel Complementary | Standard | 12V | 5.1A | 34 mOhm @ 4.6A, 4.5V | 1V @ 250µA | 23.1nC @ 10V | 1003pF @ 6V | |||
|
获得报价 |
3,135
有现货
|
Diodes Incorporated | MOSFET N/P-CH 12V 5.1A UDFN2020 | Automotive, AEC-Q101 | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 1.36W | U-DFN2020-6 (Type B) | N and P-Channel Complementary | Standard | 12V | 5.1A | 34 mOhm @ 4.6A, 4.5V | 1V @ 250µA | 23.1nC @ 10V | 1003pF @ 6V | |||
|
获得报价 |
1,926
有现货
|
Diodes Incorporated | MOSFET N/P-CH 12V 5.1A UDFN2020 | Automotive, AEC-Q101 | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 6-UDFN Exposed Pad | 1.36W | U-DFN2020-6 (Type B) | N and P-Channel Complementary | Standard | 12V | 5.1A | 34 mOhm @ 4.6A, 4.5V | 1V @ 250µA | 23.1nC @ 10V | 1003pF @ 6V | |||
|
获得报价 |
3,706
有现货
|
ON Semiconductor | MOSFET 2N-CH 60V 5.1A 8-SO | UltraFET™ | Obsolete | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.5W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.1A | 49 mOhm @ 5.1A, 10V | 3V @ 250µA | 23nC @ 10V | 620pF @ 25V | |||
|
获得报价 |
3,709
有现货
|
ON Semiconductor | MOSFET 2N-CH 60V 5.1A 8-SO | UltraFET™ | Obsolete | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.5W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.1A | 49 mOhm @ 5.1A, 10V | 3V @ 250µA | 23nC @ 10V | 620pF @ 25V | |||
|
获得报价 |
3,570
有现货
|
ON Semiconductor | MOSFET 2N-CH 60V 5.1A 8-SO | UltraFET™ | Obsolete | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 2.5W | 8-SO | 2 N-Channel (Dual) | Logic Level Gate | 60V | 5.1A | 49 mOhm @ 5.1A, 10V | 3V @ 250µA | 23nC @ 10V | 620pF @ 25V | |||
|
获得报价 |
960
有现货
|
Diodes Incorporated | MOSFET 2P-CH 40V 5.1A 8SOIC | - | Active | Digi-Reel® | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.3W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 40V | 5.1A | 45 mOhm @ 4.4A, 10V | 3V @ 250µA | 21.5nC @ 10V | 1154pF @ 20V | |||
|
获得报价 |
2,280
有现货
|
Diodes Incorporated | MOSFET 2P-CH 40V 5.1A 8SOIC | - | Active | Cut Tape (CT) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.3W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 40V | 5.1A | 45 mOhm @ 4.4A, 10V | 3V @ 250µA | 21.5nC @ 10V | 1154pF @ 20V | |||
|
获得报价 |
1,032
有现货
|
Diodes Incorporated | MOSFET 2P-CH 40V 5.1A 8SOIC | - | Active | Tape & Reel (TR) | -55°C ~ 150°C (TJ) | Surface Mount | 8-SOIC (0.154", 3.90mm Width) | 1.3W | 8-SO | 2 P-Channel (Dual) | Logic Level Gate | 40V | 5.1A | 45 mOhm @ 4.4A, 10V | 3V @ 250µA | 21.5nC @ 10V | 1154pF @ 20V |