- 零件状态 :
- 漏极-源极电压(Vdss) :
- Rds开启(最大)@Id,Vgs :
- Vgs(th)(最大)@Id :
- 栅极电荷(Qg)(最大)@Vgs :
- 输入电容(Ciss)(最大)@Vds :
12 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压(Vdss) | 25°C时的电流-连续漏极(Id) | Rds开启(最大)@Id,Vgs | Vgs(th)(最大)@Id | 栅极电荷(Qg)(最大)@Vgs | 输入电容(Ciss)(最大)@Vds | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
1,081
有现货
|
Microsemi Corporation | MOSFET 2N-CH 800V 28A SP3 | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 277W | SP3 | 2 N-Channel (Dual) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
|
获得报价 |
3,986
有现货
|
Microsemi Corporation | MOSFET 2N-CH 800V 28A SP1 | - | Obsolete | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 277W | SP1 | 2 N-Channel (Half Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
|
获得报价 |
991
有现货
|
Microsemi Corporation | MOSFET 4N-CH 1200V 28A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 125W | SP3 | 4 N-Channel (Three Level Inverter) | Standard | 1200V (1.2kV) | 28A | 98 mOhm @ 20A, 20V | 2.2V @ 1mA | 49nC @ 20V | 950pF @ 1000V | |||
|
获得报价 |
854
有现货
|
Microsemi Corporation | MOSFET 2N-CH 800V 28A SP4 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP4 | 277W | SP4 | 2 N-Channel (Half Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
|
获得报价 |
1,485
有现货
|
Microsemi Corporation | MOSFET 6N-CH 800V 28A SP6-P | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 277W | SP6-P | 6 N-Channel (3-Phase Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
|
获得报价 |
2,999
有现货
|
Microsemi Corporation | MOSFET 6N-CH 800V 28A SP6P | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP6 | 277W | SP6-P | 6 N-Channel (3-Phase Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
|
获得报价 |
2,429
有现货
|
Microsemi Corporation | MOSFET 4N-CH 800V 28A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 277W | SP3 | 4 N-Channel (H-Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
|
获得报价 |
1,907
有现货
|
Microsemi Corporation | MOSFET 4N-CH 800V 28A SP1 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP1 | 277W | SP1 | 4 N-Channel (H-Bridge) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
|
获得报价 |
3,381
有现货
|
Microsemi Corporation | MOSFET 2N-CH 800V 28A SP3 | - | Active | Bulk | -40°C ~ 150°C (TJ) | Chassis Mount | SP3 | 277W | SP3 | 2 N-Channel (Dual) | Standard | 800V | 28A | 150 mOhm @ 14A, 10V | 3.9V @ 2mA | 180nC @ 10V | 4507pF @ 25V | |||
|
获得报价 |
2,004
有现货
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | |||
|
获得报价 |
3,538
有现货
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V | |||
|
获得报价 |
3,624
有现货
|
EPC | TRANS GAN SYMMETRICAL HALF BRIDG | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | Die | - | Die | 2 N-Channel (Half Bridge) | GaNFET (Gallium Nitride) | 80V | 28A | 5.5 mOhm @ 20A, 5V | 2.5V @ 7mA | 6.5nC @ 5V | 760pF @ 40V |