6 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 工作温度 | 安装类型 | 包装/箱 | 最大功率 | 供应商设备包 | FET型 | FET特性 | 漏极-源极电压（Vdss） | 25°C时的电流-连续漏极（Id） | Rds开启（最大）@Id，Vgs | Vgs（th）（最大）@Id | 栅极电荷（Qg）（最大）@Vgs | 输入电容（Ciss）（最大）@Vds | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
3,637
有现货
|
EPC | TRANS GAN 3N-CH BUMPED DIE | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | ||
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|
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获得报价 |
3,869
有现货
|
EPC | TRANS GAN 3N-CH BUMPED DIE | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | ||
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|
|
获得报价 |
3,009
有现货
|
EPC | TRANS GAN 3N-CH BUMPED DIE | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | ||
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获得报价 |
883
有现货
|
EPC | MOSFET 3 N-CH 60V/100V 9BGA | eGaN® | Active | Digi-Reel® | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | ||
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获得报价 |
2,450
有现货
|
EPC | MOSFET 3 N-CH 60V/100V 9BGA | eGaN® | Active | Cut Tape (CT) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V | ||
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|
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获得报价 |
2,295
有现货
|
EPC | MOSFET 3 N-CH 60V/100V 9BGA | eGaN® | Active | Tape & Reel (TR) | -40°C ~ 150°C (TJ) | Surface Mount | 9-VFBGA | - | 9-BGA (1.35x1.35) | 3 N-Channel (Half Bridge + Synchronous Bootstrap) | GaNFET (Gallium Nitride) | 60V, 100V | 1.7A, 500mA | 190 mOhm @ 2.5A, 5V, 3.3 Ohm @ 2.5A, 5V | 2.5V @ 100µA, 2.5V @ 20µA | 0.22nC @ 5V, 0.044nC @ 5V | 22pF @ 30V, 7pF @ 30V |
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