- 系列 :
- 包装材料 :
- 电流-平均整流(Io) :
- 正向电压(Vf)(最大)@If :
- 工作温度-结 :
6 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 安装类型 | 包装/箱 | 供应商设备包 | 二极管型 | 电流-平均整流(Io) | 正向电压(Vf)(最大)@If | 电流-反向泄漏@Vr | 电压-直流反向(Vr)(最大) | 速度 | 反向恢复时间(trr) | 工作温度-结 | 电容@Vr,F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,449
有现货
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 4A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz | |||
|
获得报价 |
2,011
有现货
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 4A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | DPAK | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz | |||
|
获得报价 |
1,404
有现货
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 4A D2PAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz | |||
|
获得报价 |
2,361
有现货
|
Infineon Technologies | DIODE SCHOTTKY 650V 5A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 160pF @ 1V, 1MHz | |||
|
获得报价 |
3,232
有现货
|
Littelfuse Inc. | DIODE SIC SCHOTTKY 650V 4A TO220 | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A (DC) | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 125pF @ 1V, 1MHz | |||
|
获得报价 |
727
有现货
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 4A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz |