- 系列 :
- 零件状态 :
- 电流-平均整流（Io） :
- 电流-反向泄漏@Vr :
- 工作温度-结 :
7 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 安装类型 | 包装/箱 | 供应商设备包 | 二极管型 | 电流-平均整流（Io） | 正向电压（Vf）（最大）@If | 电流-反向泄漏@Vr | 电压-直流反向（Vr）（最大） | 速度 | 反向恢复时间（trr） | 工作温度-结 | 电容@Vr，F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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|
获得报价 |
809
有现货
|
STMicroelectronics | DIODE SCHOTTKY 650V 4A DPAK | - | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Silicon Carbide Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | ||
|
|
|
获得报价 |
2,866
有现货
|
STMicroelectronics | DIODE SCHOTTKY 650V 4A DPAK | - | Active | Cut Tape (CT) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Silicon Carbide Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | ||
|
|
|
获得报价 |
3,853
有现货
|
STMicroelectronics | DIODE SCHOTTKY 650V 4A DPAK | - | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-Pak | Silicon Carbide Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz | ||
|
|
获得报价 |
2,808
有现货
|
STMicroelectronics | DIODE SCHOTTKY 650V 4A TO220AC | - | Active | Tube | Through Hole | TO-220-2 Insulated, TO-220AC | TO-220AC ins | Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -40°C ~ 175°C | - | ||
|
|
获得报价 |
3,136
有现货
|
STMicroelectronics | DIODE GEN PURP 600V 4A DO201AD | TURBOSWITCH™ | Obsolete | Tape & Reel (TR) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A (DC) | 1.75V @ 4A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | 125°C (Max) | - | ||
|
|
|
获得报价 |
1,721
有现货
|
STMicroelectronics | DIODE GEN PURP 600V 4A DO201AD | TURBOSWITCH™ | Obsolete | Tape & Box (TB) | Through Hole | DO-201AD, Axial | DO-201AD | Standard | 4A (DC) | 1.75V @ 4A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | 125°C (Max) | - | ||
|
|
获得报价 |
3,528
有现货
|
STMicroelectronics | DIODE SCHOTTKY 650V 4A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 4A | 1.75V @ 4A | 40µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | 200pF @ 0V, 1MHz |
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