- 制造商 :
- 电流-反向泄漏@Vr :
-
- 1.7mA @ 650V (1)
- 100µA @ 1200V (4)
- 10µA @ 600V (4)
- 120µA @ 1200V (1)
- 15µA @ 1500V (1)
- 180µA @ 1200V (1)
- 200µA @ 10A (1)
- 200µA @ 1200V (3)
- 200µA @ 1700V (1)
- 200µA @ 600V (2)
- 200µA @ 650V (1)
- 20µA @ 1200V (3)
- 240µA @ 1200V (2)
- 250µA @ 1200V (4)
- 400µA @ 1200V (1)
- 40µA @ 1200V (1)
- 50µA @ 600V (3)
- 50µA @ 650V (1)
- 60µA @ 650V (1)
- 62µA @ 1200V (1)
- 62µA @ 12V (3)
- 电容@Vr，F :
-
- 1000F @ 0V, 1MHz (1)
- 1000pF @ 0V, 1MHz (1)
- 1120pF @ 0V, 1MHz (1)
- 140pF @ 4V, 1MHz (3)
- 250pF @ 1V, 1MHz (1)
- 29pF @ 800V, 1MHz (3)
- 300pF @ 1V, 1MHz (3)
- 375pF @ 1V, 1MHz (1)
- 41pF @ 600V, 1MHz (1)
- 460.5pF @ 0V, 1MHz (1)
- 480pF @ 0V, 1MHz (4)
- 500pF @ 1V, 1MHz (1)
- 520pF @ 1V, 1MHz (1)
- 525pF @ 1V, 1MHz (1)
- 550pF @ 0V, 1MHz (2)
- 580pF @ 1V, 1MHz (1)
- 582pF @ 1V, 1MHz (4)
- 600pF @ 0V, 1MHz (1)
- 630pF @ 1V, 1MHz (1)
- 635pF @ 1V, 1MHz (3)
- 754pF @ 0V, 1MHz (4)
42 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 安装类型 | 包装/箱 | 供应商设备包 | 二极管型 | 电流-平均整流（Io） | 正向电压（Vf）（最大）@If | 电流-反向泄漏@Vr | 电压-直流反向（Vr）（最大） | 速度 | 反向恢复时间（trr） | 工作温度-结 | 电容@Vr，F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
获得报价 |
2,474
有现货
|
Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO247-3 | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 | PG-TO247-3 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 240µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 580pF @ 1V, 1MHz | ||
|
|
获得报价 |
2,606
有现货
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO263-2 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 1.7mA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | ||
|
|
获得报价 |
3,311
有现货
|
Microsemi Corporation | DIODE SCHOTTKY 1700V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 23A (DC) | 1.8V @ 10A | 200µA @ 1700V | 1700V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1120pF @ 0V, 1MHz | ||
|
|
|
获得报价 |
1,098
有现货
|
Microsemi Corporation | DIODE SCHOTTKY 1200V 10A TO247 | - | Obsolete | - | Through Hole | TO-247-2 | TO-247 | Silicon Carbide Schottky | 43A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 630pF @ 1V, 1MHz | ||
|
|
获得报价 |
3,381
有现货
|
Renesas Electronics America | DIODE SCHOTTKY 600V 10A TO220FP | - | Active | Tube | Surface Mount | TO-220-3 Full Pack | TO-220FP | Schottky | 10A (DC) | 1.8V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 15ns | -55°C ~ 150°C | - | ||
|
|
获得报价 |
2,337
有现货
|
Infineon Technologies | DIODE SCHOTTKY 1200V 10A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 240µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 500pF @ 1V, 1MHz | ||
|
|
获得报价 |
1,654
有现货
|
Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 10A TO220-2 | Zero Recovery™ | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 31A (DC) | 1.8V @ 10A | 200µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1000pF @ 0V, 1MHz | ||
|
|
|
获得报价 |
2,603
有现货
|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 16.5A TO263 | - | Obsolete | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | Silicon Carbide Schottky | 16.5A | 1.8V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 550pF @ 0V, 1MHz | ||
|
|
|
获得报价 |
3,978
有现货
|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 16.5A TO220 | - | Obsolete | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 16.5A | 1.8V @ 10A | 200µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 550pF @ 0V, 1MHz | ||
|
|
获得报价 |
3,848
有现货
|
Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 33A TO252-2 | Z-Rec® | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 33A (DC) | 1.8V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 754pF @ 0V, 1MHz | ||
|
|
获得报价 |
2,137
有现货
|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 29.5A TO263 | Z-Rec® | Active | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263-2 | Schottky | 29A (DC) | 1.8V @ 10A | 50µA @ 600V | 600V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 480pF @ 0V, 1MHz | ||
|
|
|
获得报价 |
764
有现货
|
Infineon Technologies | DIODE SCHOTTKY 650V 10A TO263-2 | thinQ!™ | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | - | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 300pF @ 1V, 1MHz | ||
|
|
|
获得报价 |
779
有现货
|
Cree/Wolfspeed | DIODE SCHOTTKY 1200V 10A | Z-Rec® | Obsolete | - | Surface Mount | Die | Die | Silicon Carbide Schottky | 31A (DC) | 1.8V @ 10A | 200µA @ 10A | - | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 1000F @ 0V, 1MHz | ||
|
|
获得报价 |
3,563
有现货
|
GeneSiC Semiconductor | DIODE SCHOTTKY 1200V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 40µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 520pF @ 1V, 1MHz | ||
|
|
获得报价 |
1,091
有现货
|
Global Power Technologies Group | DIODE SCHOTTKY 1.2KV 10A TO252-2 | Amp+™ | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2L (DPAK) | Silicon Carbide Schottky | 10A (DC) | 1.8V @ 10A | 20µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 635pF @ 1V, 1MHz | ||
|
|
获得报价 |
1,377
有现货
|
WeEn Semiconductors | DIODE GEN PURP 600V 10A TO220AC | - | Active | Tube | Through Hole | TO-220-2 | TO-220AC | Standard | 10A | 1.8V @ 10A | - | 600V | Fast Recovery = 200mA (Io) | 19ns | 150°C (Max) | - | ||
|
|
|
获得报价 |
3,048
有现货
|
Infineon Technologies | DIODE SCHOTTKY 1.2KV 7.5A TO247 | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 Variant | PG-TO247HC-3 | Silicon Carbide Schottky | 7.5A (DC) | 1.8V @ 10A | 180µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 375pF @ 1V, 1MHz | ||
|
|
|
获得报价 |
3,245
有现货
|
Infineon Technologies | DIODE SCHOTTKY 1.2KV 5A TO247HC | thinQ!™ | Obsolete | Tube | Through Hole | TO-247-3 Variant | PG-TO247HC-3 | Silicon Carbide Schottky | 5A (DC) | 1.8V @ 10A | 120µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | ||
|
|
获得报价 |
607
有现货
|
ON Semiconductor | DIODE GEN PURP 1.5KV 10A TO220F | - | Obsolete | Tube | Through Hole | TO-220-2 Full Pack | TO-220F-2L | Standard | 10A | 1.8V @ 10A | 15µA @ 1500V | 1500V | Fast Recovery = 200mA (Io) | 150ns | -65°C ~ 150°C | - | ||
|
|
|
获得报价 |
3,819
有现货
|
Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 10A TO252-2 | Z-Rec® | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 33A (DC) | 1.8V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 754pF @ 0V, 1MHz | ||
|
|
|
获得报价 |
1,723
有现货
|
Cree/Wolfspeed | DIODE SCHOTTKY 1.2KV 10A TO220-2 | Z-Rec® | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 33A (DC) | 1.8V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 754pF @ 0V, 1MHz | ||
|
|
|
获得报价 |
1,948
有现货
|
Cree/Wolfspeed | DIODE SCHOTTKY 650V 32A TO252-2 | Z-Rec® | Active | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Silicon Carbide Schottky | 32A (DC) | 1.8V @ 10A | 50µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 460.5pF @ 0V, 1MHz | ||
|
|
|
获得报价 |
1,381
有现货
|
Cree/Wolfspeed | DIODE SCHOTTKY 600V 10A TO220-2 | Z-Rec® | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 30A (DC) | 1.8V @ 10A | 50µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 480pF @ 0V, 1MHz | ||
|
|
获得报价 |
978
有现货
|
Central Semiconductor Corp | DIODE SCHOTTKY 1.2KV 10A TO220-2 | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 10A | 1.8V @ 10A | 400µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 41pF @ 600V, 1MHz | ||
|
|
获得报价 |
774
有现货
|
Cree/Wolfspeed | ZRECTM 10A 1200V SIC SCHOTTKY DI | Z-Rec® | Active | - | Through Hole | TO-247-2 | TO-247-2 | Silicon Carbide Schottky | 31.5A (DC) | 1.8V @ 10A | 250µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 754pF @ 0V, 1MHz | ||
|
|
获得报价 |
2,246
有现货
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO277A | - | Active | Digi-Reel® | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 10A | 1.8V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -55°C ~ 175°C | 140pF @ 4V, 1MHz | ||
|
|
|
获得报价 |
2,387
有现货
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO277A | - | Active | Cut Tape (CT) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 10A | 1.8V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -55°C ~ 175°C | 140pF @ 4V, 1MHz | ||
|
|
|
获得报价 |
3,998
有现货
|
Taiwan Semiconductor Corporation | DIODE GEN PURP 600V 10A TO277A | - | Active | Tape & Reel (TR) | Surface Mount | TO-277, 3-PowerDFN | TO-277A (SMPC) | Standard | 10A | 1.8V @ 10A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 40ns | -55°C ~ 175°C | 140pF @ 4V, 1MHz | ||
|
|
获得报价 |
2,096
有现货
|
Littelfuse Inc. | DIODE SCHOTTKY 1.2KV 28A TO220-2 | Gen2 | Active | Tube | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 28A (DC) | 1.8V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 582pF @ 1V, 1MHz | ||
|
|
获得报价 |
3,371
有现货
|
Littelfuse Inc. | DIODE SCHOTTKY 1.2KV 33A TO252 | Gen2 | Active | Digi-Reel® | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252, (D-Pak) | Silicon Carbide Schottky | 33A (DC) | 1.8V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 582pF @ 1V, 1MHz |
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