- 电流-反向泄漏@Vr :
-
- 1.4mA @ 650V (1)
- 100µA @ 600V (3)
- 100µA @ 650V (2)
- 10µA @ 1200V (2)
- 140µA @ 650V (3)
- 160µA @ 600V (8)
- 200µA @ 1200V (1)
- 230µA @ 650V (1)
- 280µA @ 650V (1)
- 300µA @ 600V (1)
- 40µA @ 1200V (4)
- 40µA @ 650V (1)
- 500µA @ 40V (3)
- 50µA @ 650V (2)
- 5mA @ 100V (1)
- 5mA @ 60V (1)
- 5µA @ 600V (10)
- 70µA @ 600V (4)
- 90µA @ 650V (1)
- 已选择过滤 :
51 产品
图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 安装类型 | 包装/箱 | 供应商设备包 | 二极管型 | 电流-平均整流(Io) | 正向电压(Vf)(最大)@If | 电流-反向泄漏@Vr | 电压-直流反向(Vr)(最大) | 速度 | 反向恢复时间(trr) | 工作温度-结 | 电容@Vr,F | |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
获得报价 |
2,380
有现货
|
Infineon Technologies | DIODE SIC 600V 8A SAWN WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Die | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | |||
|
获得报价 |
2,053
有现货
|
Infineon Technologies | DIODE SIC 600V 8A SAWN WAFER | thinQ!™ | Obsolete | Bulk | Surface Mount | Die | Die | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | |||
|
获得报价 |
1,390
有现货
|
Infineon Technologies | DIODE SCHOTTKY 650V 8A VSON-4 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 140µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 250pF @ 1V, 1MHz | |||
|
获得报价 |
3,339
有现货
|
Infineon Technologies | DIODE SCHOTTKY 650V 8A TO263-2 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 8A (DC) | 1.8V @ 8A | 1.4mA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | |||
|
获得报价 |
3,982
有现货
|
Infineon Technologies | DIODE SCHOTTKY 650V 8A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 280µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | |||
|
获得报价 |
1,565
有现货
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A DPAK | HEXFRED® | Obsolete | Tube | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | Standard | 8A (DC) | 1.7V @ 8A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | -55°C ~ 150°C | - | |||
|
获得报价 |
3,488
有现货
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A D2PAK | HEXFRED® | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Standard | 8A (DC) | 1.7V @ 8A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | -55°C ~ 150°C | - | |||
|
获得报价 |
924
有现货
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A D2PAK | HEXFRED® | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | D2PAK | Standard | 8A (DC) | 1.7V @ 8A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | -55°C ~ 150°C | - | |||
|
获得报价 |
759
有现货
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A DPAK | HEXFRED® | Obsolete | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | Standard | 8A (DC) | 1.7V @ 8A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | -55°C ~ 150°C | - | |||
|
获得报价 |
3,599
有现货
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A DPAK | HEXFRED® | Obsolete | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | Standard | 8A (DC) | 1.7V @ 8A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | -55°C ~ 150°C | - | |||
|
获得报价 |
3,892
有现货
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A DPAK | HEXFRED® | Obsolete | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | D-PAK (TO-252AA) | Standard | 8A (DC) | 1.7V @ 8A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | -55°C ~ 150°C | - | |||
|
获得报价 |
2,844
有现货
|
Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 8A (DC) | 2.1V @ 8A | 70µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
|
获得报价 |
2,165
有现货
|
Infineon Technologies | DIODE SCHOTTKY 600V 8A TO252-3 | thinQ!™ | Discontinued at Digi-Key | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | Silicon Carbide Schottky | 8A (DC) | 2.1V @ 8A | 70µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
|
获得报价 |
3,653
有现货
|
Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Obsolete | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 300µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 280pF @ 0V, 1MHz | |||
|
获得报价 |
883
有现货
|
Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Discontinued at Digi-Key | Tube | Through Hole | TO-220-2 | PG-TO220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 310pF @ 1V, 1MHz | |||
|
获得报价 |
2,827
有现货
|
Toshiba Semiconductor and Storage | DIODE SCHOTTKY 650V 8A TO220-2L | - | Active | Tube | Through Hole | TO-220-2 | TO-220-2L | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 90µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 44pF @ 650V, 1MHz | |||
|
获得报价 |
3,608
有现货
|
Infineon Technologies | DIODE SCHOTTKY 600V 8A TO220-2 | thinQ!™ | Active | - | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 2.1V @ 8A | 70µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
|
获得报价 |
684
有现货
|
Infineon Technologies | DIODE SCHOTTKY 600V 8A TO252-3 | thinQ!™ | Active | - | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | PG-TO252-3 | Silicon Carbide Schottky | 8A (DC) | 2.1V @ 8A | 70µA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 240pF @ 1V, 1MHz | |||
|
获得报价 |
1,334
有现货
|
Comchip Technology | DIODE SCHOTTKY 100V 8A TO263 | - | Active | Tube | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263 (D²Pak) | Schottky | 8A (DC) | 850mV @ 8A | 5mA @ 100V | 100V | Fast Recovery = 200mA (Io) | - | -50°C ~ 150°C | - | |||
|
获得报价 |
2,438
有现货
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A D2PAK | HEXFRED® | Preliminary | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 8A (DC) | 2.1V @ 16A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | -55°C ~ 150°C | - | |||
|
获得报价 |
3,083
有现货
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A D2PAK | HEXFRED® | Preliminary | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 8A (DC) | 2.1V @ 16A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | -55°C ~ 150°C | - | |||
|
获得报价 |
3,914
有现货
|
Infineon Technologies | DIODE SCHOTTKY 650V 8A TO263-2 | thinQ!™ | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | PG-TO263-2 | Silicon Carbide Schottky | 8A (DC) | 1.8V @ 8A | - | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | |||
|
获得报价 |
2,415
有现货
|
Infineon Technologies | DIODE SCHOTTKY 650V 8A VSON-4 | thinQ!™ | Active | Tape & Reel (TR) | Surface Mount | 4-PowerTSFN | PG-VSON-4 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 140µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 150°C | 250pF @ 1V, 1MHz | |||
|
获得报价 |
625
有现货
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 | TO-220-2 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
|
获得报价 |
1,698
有现货
|
Cree/Wolfspeed | DIODE SCHOTTKY 650V 8A TO252-2 | Z-Rec® | Active | Tape & Reel (TR) | Surface Mount | TO-252-3, DPak (2 Leads + Tab), SC-63 | TO-252-2 | Schottky | 8A (DC) | 1.8V @ 2A | 50µA @ 650V | 650V | Fast Recovery = 200mA (Io) | - | -55°C ~ 175°C | 120pF @ 0V, 1MHz | |||
|
获得报价 |
1,476
有现货
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | |||
|
获得报价 |
2,624
有现货
|
Infineon Technologies | DIODE SCHOTTKY 650V 8A TO220-2-1 | thinQ!™ | Active | Tube | Through Hole | TO-220-2 | PG-TO220-2-1 | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 140µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 250pF @ 1V, 1MHz | |||
|
获得报价 |
1,043
有现货
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 600V 8A D2PAK | HEXFRED® | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 8A (DC) | 2.1V @ 16A | 5µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 55ns | -55°C ~ 150°C | - | |||
|
获得报价 |
794
有现货
|
GeneSiC Semiconductor | DIODE SILICON 1.2KV 8A TO257 | - | Active | Tube | Through Hole | TO-257-3 | TO-257 | Silicon Carbide Schottky | 8A (DC) | 1.6V @ 2.5A | 10µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 250°C | 237pF @ 1V, 1MHz | |||
|
获得报价 |
1,064
有现货
|
Vishay Semiconductor Diodes Division | DIODE GEN PURP 1200V 8A D2PAK | HEXFRED® | Active | - | Surface Mount | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB | TO-263AB (D²PAK) | Standard | 8A (DC) | 4.3V @ 16A | 10µA @ 1200V | 1200V | Fast Recovery = 200mA (Io) | 95ns | -55°C ~ 150°C | - |