- 零件状态 :
- 包装材料 :
- 电流-平均整流（Io） :
- 已选择过滤 :
21 产品
| 图片 | 型号 | 价格 | 数量 | 库存 | 制造商 | 描述 | 系列 | 零件状态 | 包装材料 | 安装类型 | 包装/箱 | 供应商设备包 | 二极管型 | 电流-平均整流（Io） | 正向电压（Vf）（最大）@If | 电流-反向泄漏@Vr | 电压-直流反向（Vr）（最大） | 速度 | 反向恢复时间（trr） | 工作温度-结 | 电容@Vr，F | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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获得报价 |
3,469
有现货
|
WeEn Semiconductors | DIODE GEN PURP 600V 9A TO220F | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Standard | 9A | 1.3V @ 8A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | 175°C (Max) | - | ||
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获得报价 |
1,816
有现货
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 10A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 10A | 1.7V @ 10A | 250µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 300pF @ 1V, 1MHz | ||
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|
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获得报价 |
1,575
有现货
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 8A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 8A | 1.7V @ 8A | 230µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 260pF @ 1V, 1MHz | ||
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|
获得报价 |
2,518
有现货
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 6A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 6A | 1.7V @ 6A | 200µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 190pF @ 1V, 1MHz | ||
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获得报价 |
2,449
有现货
|
WeEn Semiconductors | DIODE SCHOTTKY 650V 4A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Silicon Carbide Schottky | 4A | 1.7V @ 4A | 170µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | 175°C (Max) | 130pF @ 1V, 1MHz | ||
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|
|
获得报价 |
3,109
有现货
|
WeEn Semiconductors | DIODE GEN PURP 600V 30A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Standard | 30A | 1.55V @ 30A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 75ns | 175°C (Max) | - | ||
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|
|
获得报价 |
2,824
有现货
|
WeEn Semiconductors | DIODE GEN PURP 600V 15A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack | TO-220F | Standard | 15A | 1.38V @ 15A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 60ns | 175°C (Max) | - | ||
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|
获得报价 |
3,260
有现货
|
WeEn Semiconductors | DIODE GEN PURP 800V 8A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack | TO-220F | Standard | 8A | 1.7V @ 8A | 10µA @ 800V | 800V | Fast Recovery = 200mA (Io) | 55ns | 175°C (Max) | - | ||
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|
获得报价 |
2,315
有现货
|
WeEn Semiconductors | DIODE GEN PURP 600V 20A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Standard | 20A | 2.9V @ 20A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 20ns | 175°C (Max) | - | ||
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获得报价 |
759
有现货
|
WeEn Semiconductors | DIODE GEN PURP 600V 5A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Standard | 5A | 3.3V @ 5A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 25ns | -65°C ~ 175°C | - | ||
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获得报价 |
893
有现货
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | ||
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|
获得报价 |
1,541
有现货
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 710pF @ 0V, 1MHz | ||
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获得报价 |
1,476
有现货
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 8A (DC) | 1.7V @ 8A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 560pF @ 0V, 1MHz | ||
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|
获得报价 |
1,155
有现货
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 430pF @ 0V, 1MHz | ||
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获得报价 |
3,301
有现货
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 5A (DC) | 1.7V @ 5A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 430pF @ 0V, 1MHz | ||
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获得报价 |
2,268
有现货
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 3A (DC) | 1.7V @ 3A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 190pF @ 0V, 1MHz | ||
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获得报价 |
1,559
有现货
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 3A (DC) | 1.7V @ 3A | 100µA @ 650V | 650V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 190pF @ 0V, 1MHz | ||
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获得报价 |
947
有现货
|
Comchip Technology | DIODE SILICON CARBIDE POWER SCHO | - | Active | - | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 10A (DC) | 1.7V @ 10A | 100µA @ 1200V | 1200V | No Recovery Time > 500mA (Io) | 0ns | -55°C ~ 175°C | 780pF @ 0V, 1MHz | ||
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获得报价 |
3,836
有现货
|
ON Semiconductor | DIODE GEN PURP 600V 20A TO220F | - | Active | Cut Tape (CT) | Through Hole | TO-220-2 | TO-220F | Standard | 20A | 1.75V @ 20A | 100µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 50ns | 150°C (Max) | - | ||
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获得报价 |
1,421
有现货
|
WeEn Semiconductors | DIODE GEN PURP 600V 15A TO220F | - | Active | Tube | Through Hole | TO-220-2 Full Pack, Isolated Tab | TO-220F | Standard | 15A | 3.2V @ 15A | 10µA @ 600V | 600V | Fast Recovery = 200mA (Io) | 18ns | 175°C (Max) | - | ||
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获得报价 |
2,691
有现货
|
Sanken | DIODE SCHOTTKY 600V 20A TO220-2 | - | Last Time Buy | Tube | Through Hole | TO-220-2 Full Pack | TO-220F | Silicon Carbide Schottky | 20A | 1.5V @ 10A | 15mA @ 600V | 600V | No Recovery Time > 500mA (Io) | 0ns | -40°C ~ 175°C | - |
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